| Band structure of III–V ternary semiconductor alloys beyond the VCA A Bechiri, F Benmakhlouf, N Bouarissa Materials chemistry and physics 77 (2), 507-510, 2003 | 70 | 2003 |
| Zinc-blende ZnS under pressure: predicted electronic properties F Benmakhlouf, A Bechiri, N Bouarissa Solid-State Electronics 47 (8), 1335-1338, 2003 | 57 | 2003 |
| Calculation of electronic and optical properties of Zn-based II–VI semiconductors A Bechiri, F Benmakhlouf, N Bouarissa Physics Procedia 2 (3), 803-812, 2009 | 24 | 2009 |
| PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-x F Benmakhlouf, N Bouarissa International Journal of Modern Physics B 20 (28), 4807-4820, 2006 | 13 | 2006 |
| Electronic band structure of InPxSb1− x alloys S Bacha, A Bechiri, F Benmakhlouf, H Allouache, N Bouarissa Physica B: Condensed Matter 406 (10), 2021-2024, 2011 | 12 | 2011 |
| Effects of substrate and compositional disorder upon optical and lattice vibration properties of quaternary semiconductor GaxIn1− xAsyP1− y S Bacha, A Bechiri, F Benmakhlouf, N Bouarissa Infrared Physics & Technology 63, 22-27, 2014 | 2 | 2014 |
| Electronic band structure calculations for GaxIn1− xASyP1− y alloys lattice matched to InP A Bechiri, F Benmakhlouf, H Allouache, S Bacha, N Bouarissa IOP Conference Series: Materials Science and Engineering 28 (1), 012004, 2012 | 2 | 2012 |
| Effet du désordre compositionnel sur les propriétés électroniques de l’alliage ternaire (Zn, Hg) Te B Bradji, A Bechiri, F Benmakhlouf, D Djebbari | | 2019 |
| The disorder effect on the electronic properties of ternary alloy ZnxHg1-xTe B Bradji, A Bechiri, F Benmakhlouf, DD Djebbari, N Bouarissa EasyChair, 2019 | | 2019 |
| Valence and conduction band edges charge densities in ZnS compound with zinc-blende structure A Bechiri, F Benmakhlouf, S Bacha, H Allouache, N Bouarissa IOP Conference Series: Materials Science and Engineering 13 (1), 012034, 2010 | | 2010 |
