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Arya Lekshmi Jagath
Arya Lekshmi Jagath
Nanyang Technological University (NTU)
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Cited by
Year
Insight into physics-based RRAM models–review
AL Jagath, CH Leong, TN Kumar, HAF Almurib
The Journal of Engineering 2019 (7), 4644-4652, 2019
282019
Modeling of current conduction during RESET phase of Pt/Ta2O5/TaOx/Pt bipolar resistive RAM devices
AL Jagath, TN Kumar, HAF Almurib
2018 IEEE 7th Non-Volatile Memory Systems and Applications Symposium (NVMSA …, 2018
142018
The effect of the top electrode on the switching behavior of bipolar Al2O3/ZnO RRAM
KB Jinesh
Microelectronic Engineering 250, 111637, 2021
102021
Multilevel non‐volatile memory based on Al2O3/ZnO bilayer device
J Arya Lekshmi, T Nandha Kumar, K Jinesh
Micro & Nano Letters 15 (13), 910-914, 2020
102020
Analytical modelling of tantalum/titanium oxide‐based multi‐layer selector to eliminate sneak path current in RRAM arrays
A Lekshmi Jagath, TN Kumar, HA Almurib, KBP Jinesh
IET Circuits, Devices & Systems 14 (7), 1092-1098, 2020
82020
A comparative study on the performance of 1S-1R and Complementary resistive switching models
AL Jagath, TN Kumar
2020 IEEE International Conference on Semiconductor Electronics (ICSE), 9-12, 2020
82020
Dynamic voltage scaling for power consumption reduction in real-time mixed task model
AL Mohan, AS Pillai
Int. conference on Computer Science Engineering and Applications, 2011
52011
Electrical model of Ta2O5/TaOx RRAM device with current conduction beyond RESET phase
AL Jagath, TN Kumar, HAF Almurib
2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019
42019
Dynamic Voltage Scaling With Reduced Frequency Switching And Preemptions
AS Arya lekshmi
International Journal of Electronics and Electical Engineering 1 (1), 10-14, 2012
4*2012
Effect of sneak path current in TiOx/HfOx based 1S1R RRAM crossbar memory array
AN Youssef, AL Jagath, NK Thulasiraman, HAF Almurib
2021 IEEE 19th Student Conference on Research and Development (SCOReD), 267-272, 2021
22021
Complementary Resistive Switching in ZnO/Al2O3 Bi-Layer Devices
JA Lekshmi, TN Kumar, KB Jinesh
IEEE Transactions on Nanotechnology 22, 206-213, 2023
12023
FPGA Implementation of Low Complexity Video Encoder using Optimized 3D-DCT
ALM Rajalekshmi R
International Journal of Engineering Research and Technology 4 (07), 2015
12015
A 1Mb RRAM Macro With 9.8 ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation
J Mu, L Lu, JE Kim, B An, V Sharma, AJ Lekshmi, PA Dananjaya, WH Lai, ...
IEEE Transactions on Circuits and Systems II: Express Briefs, 2024
2024
Al2O3 bi-layer devices
NK Thulasiraman, JA Lekshmi, KB Jinesh
Authorea Preprints, 2023
2023
Electrical Modeling of One Selector-One Resistor (1S-1R) for Mitigating the Sneak-Path Current in a Nano-Crossbar Array
JA Lekshmi, TN Kumar, AF Haider, KB Jinesh
Nanoelectronics for Next-Generation Integrated Circuits, 147-174, 2022
2022
Self-limited Bipolar Au/ Al2O3/ZnO/FTO RRAM and its comparison with Ag/ Al2O3/ZnO/FTO devices
KBJ Arya Lekshmi, T. N. Kumar
Elsevier's Microelectronic Engineering 250 (111637), ISSN 0167-9317, 2021
2021
Implementation of sub-filamentary network-based variability model for Ta2O5/TaOx RRAM
JA Lekshmi, TN Kumar, AF Haider, KB Jinesh
2021 IEEE 21st International Conference on Nanotechnology (NANO), 366-369, 2021
2021
Self-rectifying self-limited Resistive switching in Au/Al2O3/FTO Devices
JA Lekshmi, TN Kumar, AF Haider, KB Jinesh
2021 IEEE 21st International Conference on Nanotechnology (NANO), 17-20, 2021
2021
Dynamic Voltage Scaling with Reduced Frequency Switching and Preemptions
ASP Arya Lekshmi Mohan
International Conference on Computer Science and Information Technology …, 2011
2011
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Articles 1–19