Esmat Farzana
Esmat Farzana
Postdoctoral Researcher, Materials Department, University of California Santa Barbara
Verified email at ucsb.edu
Title
Cited by
Cited by
Year
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 052105, 2016
2172016
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 202102, 2017
952017
Effect of Fe-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis
SM Salaken, E Farzana, J Podder
Journal of Semiconductors 34 (7), 073003, 2013
692013
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel
Journal of Applied Physics 123 (16), 161410, 2018
672018
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
502019
Impact of deep level defects induced by high energy neutron radiation in -Ga2O3
E Farzana, MF Chaiken, TE Blue, AR Arehart, SA Ringel
APL Materials 7 (2), 022502, 2019
482019
Adaptive bilateral filtering for despeckling of medical ultrasound images
E Farzana, M Tanzid, KM Mohsin, MIH Bhuiyan, S Hossain
TENCON 2010-2010 IEEE Region 10 Conference, 1728-1733, 2010
282010
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFMAU Bhuiyan, ...
APL Materials 8 (2), 021111, 2020
212020
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ...
Journal of Applied Physics 118 (15), 155701, 2015
202015
Influence of neutron irradiation on deep levels in Ge-doped (010) -Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, A Mauze, JB Varley, TE Blue, JS Speck, AR Arehart, ...
APL Materials 7 (12), 121102, 2019
92019
APL Mater. 7, 022502 (2019)
E Farzana, MF Chaiken, TE Blue, AR Arehart, SA Ringel
8
paper presented at 2nd International Workshop on Ga2O3 and Related Materials
AA Arehart, E Farzana, TE Blue, SA Ringel
Parma, Italy, September, 2017
62017
Bilateral filtering with adaptation to phase coherence and noise
E Farzana, M Tanzid, KM Mohsin, MIH Bhuiyan
Signal, Image and Video Processing 7 (2), 367-376, 2013
52013
APL Mater. 7, 121102 (2019)
E Farzana, A Mauze, JB Varley, TE Blue, JS Speck, AR Arehart, ...
5
Over 1 kV Vertical GaN-on-GaN pn Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
E Farzana, J Wang, M Monavarian, T Itoh, KS Qwah, ZJ Biegler, ...
IEEE Electron Device Letters 41 (12), 1806-1809, 2020
32020
Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies
E Farzana, HM Foronda, CM Jackson, T Razzak, Z Zhang, JS Speck, ...
Journal of Applied Physics 124 (14), 145703, 2018
32018
Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck
Applied Physics Letters 118 (16), 162109, 2021
22021
Despeckling SAR images with an adaptive bilateral filter
E Farzana, MIH Bhuiyan
2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013
22013
Analysis of temperature and wave function penetration effects in nanoscale double-gate MOSFETs
E Farzana, S Chowdhury, R Ahmed, MZR Khan
Applied Nanoscience 3 (2), 109-117, 2013
22013
Impurity Photovoltaic Effect in Multijunction Solar Cells
MSP Khan, E Farzana
Procedia Technology 7, 166-172, 2013
22013
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Articles 1–20